Staff Memory Design Engineer, HBM
Focus on DRAM subsystem architecture, transistor-level CMOS design, and HBM memory core circuits.
Originally posted 23 September 2026 by the employer.
About the role
The Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while supporting the development of digital and analog circuitry used in advanced memory products. This role contributes to silicon-to-system development across design, verification, product engineering, test, probe, process integration, assembly, and marketing.
What you'll do
- Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution.
- Utilize AI-enabled tools to assist with schematic editing, data collection, and layout floorplan.
- Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size.
- Conduct circuit simulations using FINESIM, HSPICE, and VERILOG to analyze power, performance, reliability, and parasitic impacts.
- Validate builds through reticle experiments, tape-out revisions, and simulation-to-silicon correlation.
- Manage layout, develop resources, track project tasks, and lead design reviews.
What you'll need
- Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, with understanding of device reliability and circuit floor planning.
- Proficiency with Cadence Virtuoso.
- Experience simulating with FINESIM, HSPICE, and VERILOG.
- Expertise in DRAM subsystem architecture, specification, operation, or design, including cross-department technical leadership experience.
Nice to have
- BS or MS in Electrical Engineering or related field plus 6 years of experience in DRAM design, product, or system.
- Deep knowledge of industry-specific technologies and competitive trends.
Skills: DRAM subsystem architecture, CMOS logic, circuit simulations, layout floorplan, tape-out revisions
More semiconductor jobs: Micron Technology jobs · Richardson jobs
This role has been open 36 days — well below the 71-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
322
|
Median days open
71 d
|
Category median salary (all employers)
$200k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (322 roles · 30 employers) |
|---|---|---|
| Open roles in this specialty | 162 | 322 |
| Median days open | 77 d | 71 d (+6 d vs this employer) |
| Median salary (USD postings) | — | $200k |
Skills observed across this category: DRAM subsystem architecture, CMOS logic, circuit simulations, layout floorplan, tape-out revisions
Who's hiring in this category
- Micron Technology (this employer) · 170 open roles · median 82 d
- Synopsys · 32 open roles · median 70 d
- Qualcomm · 19 open roles · median 91 d
- SanDisk · 17 open roles · median 57 d
- Broadcom · 16 open roles · median 71 d
- Arm Holdings · 7 open roles · median 2 d
How we counted: 322 open Memory Design (Memory Design) roles from 30 employers tracked in the SemiconductorJobs index, counted 30 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.