RF Power Amplifier Applications Intern - Morgan Hill, CA, United States
Originally posted 5 October 2026 by the employer.
About the role
The engineering intern will work at the Morgan Hill, CA Design Center focusing on device characterization of high-power GaN transistor products geared toward the Base Station market. The role includes designing, assembling, and tuning impedance matching networks on the RF bench using MWO or ADS and AutoCAD.
What you'll do
- Perform device characterization of high-power GaN transistor products supporting current product development and R&D activities. - Operate RF test bench software and Digital Predistortion testers, handling RF devices, biasing devices, capturing accurate RF data, and processing data. - Design an impedance matching network for a GaN device to match to a 50 ohm environment using MWO or ADS design software. - Layout the impedance matching network in AutoCAD and coordinate its fabrication. - Assemble, solder components, and tune the circuit on the RF bench. - Deliver an individual project with set outcome goals and present project results at a poster session.
What you'll need
- Active enrollment in an engineering degree program relevant to RF or electrical engineering. - Familiarity with RF concepts, RF devices, and biasing devices. - Exposure to or coursework involving RF simulation tools such as MWO or ADS. - Basic experience or familiarity with AutoCAD for circuit layout. - Hands-on lab skills including soldering components and bench test equipment operation.
Skills: GaN, Power Amplifier, impedance matching, MWO, ADS