GaN RF Power Amplifier Applications Intern - Mesa, AZ, United States
Originally posted 28 September 2026 by the employer.
Work on high-power GaN transistor characterization and impedance matching network design using ADS or MWO.
About the role
The GaN RF Power Amplifier Applications Intern performs device characterization of high-power GaN transistor products geared toward the base station market. The role focuses on RF bench measurement, digital predistortion testing, and designing impedance matching networks.
What you'll do
- Operate RF test bench software and digital predistortion testers to bias devices and capture accurate RF data. - Perform RF device handling and data processing in support of product development and R&D activities. - Design an impedance matching network for a GaN device using MWO or ADS design software to match the device to a 50-ohm environment. - Layout the impedance matching network in AutoCAD and coordinate its fabrication. - Assemble, solder components, and tune the circuit on the RF bench. - Present project successes and pitfalls at an intern poster session.
What you'll need
- Experience or coursework in RF device characterization and operating RF bench equipment. - Familiarity with RF simulation tools such as ADS or MWO. - Familiarity with circuit layout using AutoCAD. - Practical experience with PCB component assembly, soldering, and RF circuit tuning. - Understanding of GaN high-power transistor products and impedance matching to a 50-ohm environment.
Skills: GaN, matching network, ADS, characterization, RF bench