Originally posted 24 April 2026 by the employer.
Develop RF Amplifier Hybrid Modules in GaN-on-Silicon technology from initial concept through production release.
About the role
A Principal RF Design Engineer is responsible for developing RF Amplifier Hybrid Modules in GaN-on-Silicon technology from conceptual phases through production release. The role sits within the Multi-Market Business Unit integration team and covers diode, MMIC, RF amplifier module, and RF power transistor products.
What you'll do
- Execute schematic circuit simulations and EM simulations. - Develop RF Amplifier Hybrid Modules in GaN-on-Silicon technology following NPD procedures through production release. - Design test circuits for evaluation and production testing, and maintain a fully equipped test bench. - Generate layouts, assembly drawings, design reports, test reports, datasheets, and bills of materials. - Perform device characterization and modeling, delivering fully characterized RF and thermal prototype samples. - Collaborate with Packaging Assembly and Product Engineering teams to align on manufacturing design rules, yields, and production release.
What you'll need
- Experience developing RF Amplifier Hybrid Modules using GaN-on-Silicon technology. - Demonstrated experience executing schematic circuit simulations and EM simulations. - Hands-on experience in device characterization, modeling, and RF/thermal test bench evaluation. - Experience generating layouts, assembly drawings, and bills of materials for hybrid modules. - Knowledge of semiconductor assembly, packaging rules, and production release procedures.
Skills: RF Amplifier, GaN-on-Silicon, EM simulations, MMIC, hybrid modules