Staff Memory Circuit Design Engineer - USA-Mendota Heights-Northland, United States
$109,700 - $175,500 USD yearly
Originally posted 13 August 2026 by the employer.
Join an elite memory team responsible for the development of memory compilers and custom macros.
About the role
As a Staff Memory Circuit Design Engineer, you will be part of an elite memory team responsible for the development of memory compilers and custom macros of all types.
What you'll do
- Analyze different memory architectures and highlight the tradeoffs
- Design and build memory or circuit blocks at the gate or transistor level
- Simulate and analyze circuit design using transistor level simulators
- Extract layout and perform post-layout simulations and verification
- Floorplan physical implementation and leafcell layout integration to build the physical macro
- Integrate characterization flow to extract timing and power information
- Develop scripts to automate characterization flow, simulations, and verification
- Specify and verify various behavioral and physical memory models
- Document design specifications, behavioral description, and timing diagrams
- Specify silicon test plan and correlate silicon to simulation data
- Help debug silicon issues
What you'll need
- Strong knowledge in development of memory compilers or custom digital circuits of all types; SRAMs, Register-files, Multi-ports, ROM
- Deep understanding of transistor level circuit behavior and device physics
- Good understanding of signal integrity, EM/IR, and reliability analysis
- Understanding of memory behavioral and physical models
- Understanding of DFT schemes and chip level integration
- Proficient in running simulators and writing automation scripts
- BS in Electrical Engineering and 8+ years of related experience
Nice to have
- Familiarity with test setups, silicon testing and debug
- Proficiency in Python programming language
Skills: memory compilers, custom macros, SRAMs, transistor level simulation, post-layout verification, leafcell layout
This role has been open 53 days — well below the 69-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
287
|
Median days open
69 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Broadcom | All employers we track in this specialty (287 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 16 | 287 |
| Median days open | 51 d | 69 d (−18 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: memory compilers, custom macros, SRAMs, transistor level simulation, post-layout verification, leafcell layout
Who's hiring in this category
- Micron Technology · 151 open roles · median 86 d
- Synopsys · 27 open roles · median 49 d
- SanDisk · 17 open roles · median 32 d
- Broadcom (this employer) · 16 open roles · median 50 d
- Qualcomm · 12 open roles · median 149 d
- NVIDIA · 7 open roles · median 59 d
How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.