Staff high speed datapath and circuit design engineer, VLSI Design Engineering - Seoul, South Korea
Originally posted 13 August 2026 by the employer.
Join our team working on 3D NAND flash memory.
About the role
This role involves architecting and designing circuits at both transistor and gate levels for 3D NAND flash memory, focusing on high-speed datapath circuit design and page buffers.
What you'll do
- Architect and design circuits at transistor level and gate level for 3D NAND flash memory, focusing on high-speed datapath circuit design and page buffers.
- Perform block level and full chip circuit simulations to meet performance specifications.
- Conduct RTL design, synthesis, static timing analysis and verification in verilog for page buffer and data path control logics.
- Conduct silicon debugging and evaluation with micro-probing.
- Collaborate with characterization engineers to characterize silicon and develop solutions for silicon issues.
- Generate detailed technical reports and presentations.
What you'll need
- MS degree in Electrical Engineering or equivalent with 10 or more years of relevant experience.
- Knowledge and/or experience in datapath design (Nand, DRAM or HBM).
- Knowledge in decoding concept and redundancy concept.
- Knowledge and/or experience in Nand page buffer design.
- Knowledge and/or experience in RTL design.
- Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular).
- Knowledge and/or experience in High speed I/O circuit.
Nice to have
- A strong device background and experience with evaluating new process technologies for use in design.
Skills: 3D NAND, datapath circuit design, page buffers, RTL design, silicon debugging
This role has been open 53 days — well below the 69-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
287
|
Median days open
69 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | SanDisk | All employers we track in this specialty (287 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 17 | 287 |
| Median days open | 32 d | 69 d (−37 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: 3D NAND, datapath circuit design, page buffers, RTL design, silicon debugging
Who's hiring in this category
- Micron Technology · 151 open roles · median 86 d
- Synopsys · 27 open roles · median 49 d
- SanDisk (this employer) · 17 open roles · median 32 d
- Broadcom · 16 open roles · median 50 d
- Qualcomm · 12 open roles · median 149 d
- NVIDIA · 7 open roles · median 59 d
How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.