Originally posted 24 September 2026 by the employer.
Join the Non-Volatile Memory Datapath Functional Group.
About the role
This role involves supporting design and validation activities of Datapath and DDR high-speed interfaces for Flash Memory products, specifically focusing on the Non-Volatile Memory Datapath Functional Group.
What you'll do
- Support design and validation activities of Datapath and DDR high-speed interfaces of Flash Memory products.
- Engage in high-speed circuits block level and sub-system level design and timing optimization.
- Supervise complex analog layouts and define IP floorplans.
- Document block level and sub-system level Micro-Architecture Spec (MAS).
- Conduct high-speed circuits functional and timing validation using simulation tools.
- Bridge process technology, device modeling, circuit design, and architecture exploration for Design-Technology Co-Optimization (DTCO).
What you'll need
- Circuit design experience in analog/mixed signal CMOS circuits in deep sub-micron technologies (5 – 40 nm) in High-speed Memory interfaces (DDR3/4/5, LPDDR3/4x/5, GDDR5/6) or SerDes.
- Capability to define and execute integrated Analog/Mixed-Signal (AMS) solutions by combining circuit/analog and digital/RTL design techniques.
- Deep knowledge of high-speed digital, analog, and mixed-signal circuit design, including power delivery circuits such as Bandgap References, LDOs, Bias Circuits.
- Strong understanding of CMOS device physics, deep-submicron design challenges, power consumption trade-offs, mismatch analysis, Monte Carlo methodologies, transistor-level noise analysis, and circuit reliability considerations.
- Experience supervising complex analog layouts, defining IP floorplans, and driving parasitic-aware design methodologies through layout signoff.
- Proficiency with industry-standard EDA tools and design flows, including Cadence ADE/Virtuoso, Spectre, AMS Verification, EM/IR analysis, MATLAB, Calibre, and mixed-signal verification environments.
- Working knowledge of mixed-mode simulation, signal integrity, package interactions, ESD design, and system-level validation methodologies.
- Knowledge of digital design methodologies using RTL, with the ability to develop behavioral and system-level models using Verilog-A, Verilog/SystemVerilog, and Python.
- M.Tech. or Ph.D. in Microelectronics, or a related discipline, with 5+ years of semiconductor industry experience in analog/mixed-signal, high-speed interface, memory, SerDes, or AMS architecture design.
Nice to have
- Prior experience in Plane Datapath Design.
- Exposure to AI-Enabled, and Agentic AI technologies, with the ability to adopt a "Design + AI" approach.
Skills: Flash Memory, Datapath, DDR high-speed interfaces, analog/mixed signal CMOS, HSPICE
This role has been open 0 days — well below the 65-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
289
|
Median days open
65 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (289 roles · 30 employers) |
|---|---|---|
| Open roles in this specialty | 146 | 289 |
| Median days open | 97 d | 65 d (+32 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: Flash Memory, Datapath, DDR high-speed interfaces, analog/mixed signal CMOS, HSPICE
Who's hiring in this category
- Micron Technology (this employer) · 144 open roles · median 101 d
- Synopsys · 27 open roles · median 38 d
- Broadcom · 18 open roles · median 45 d
- SanDisk · 17 open roles · median 21 d
- Qualcomm · 15 open roles · median 164 d
- NVIDIA · 7 open roles · median 48 d
How we counted: 289 open Memory Design (Memory Design) roles from 30 employers tracked in the SemiconductorJobs index, counted 24 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.