$135,900 - $295,000 USD yearly
Lead RF/MMIC architecture, design, and EM co-simulation across GaN, GaAs, and RF Silicon processes using ADS and HFSS.
About the role
This role serves as a technical lead for RF/MMIC architecture, design research, and product development across defense, satellite communications, and wireless systems. The focus spans high-performance GaN and GaAs circuits, advanced silicon processes, and integration with BAW and SAW filters.
What you'll do
- Lead RF/MMIC architecture, design research, and product development for GaN, GaAs, and advanced silicon circuits.
- Design, simulate, layout, and characterize MMICs including power amplifiers, LNAs, phase shifters, switches, attenuators, multifunction circuits, and integrated BAW/SAW filters.
- Perform nonlinear modeling, 2.5D/3D EM co-simulation, and circuit optimization using ADS, HFSS, Cadence, and similar tools.
- Build and validate prototypes in microwave labs using S-parameter, noise, load-pull, and thermal measurements.
- Contribute to technology road-mapping, novel circuit architectures, and heterogeneous integration concepts.
- Mentor junior engineers, submit invention disclosures for patents, and publish technical design work.
What you'll need
- BS in Electrical Engineering with 15+ years of experience, MS with 12+ years, or PhD (RF/Microwave focus) with 8+ years.
- Experience designing III-V microwave/millimeter-wave RF/MMIC amplifiers, switches, phase shifters, attenuators, TDUs, hybrid multichip modules, or transmit/receive FEMs.
- Experience with GaN, GaAs, and RF Silicon processes, along with an understanding of device transistor behavioral characteristics.
- Proficiency with ADS or Microwave Office (MWO) nonlinear simulators, plus 2.5D or 3D EM simulation tools such as SONNET, Axiem, Momentum, or HFSS.
- Hands-on experience with microwave measurements and calibration methods, including S-parameters, power, efficiency, source/load pull, noise figure, linearity, and intermodulation distortion.
Nice to have
- Experience designing millimeter wave GaAs or GaN MMIC power amplifiers with simultaneous power, bandwidth, efficiency, and linearity requirements.
- SiGe and/or CMOS-based RFIC/MMIC, analog, and mixed signal design experience.
- Track record as a published author in technical journals and/or magazines.
Skills: MMIC, GaN, GaAs, power amplifier, ADS, HFSS
More semiconductor jobs: RF design jobs
This role has been open 4 days — well below the 52-day median for RF/Wireless Engineering roles.
RF/Wireless Engineering · RF Frontend
|
Open roles in category
266
|
Median days open
52 d
|
Category median salary (all employers)
$166k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Skyworks | All employers we track in this specialty (266 roles · 36 employers) |
|---|---|---|
| Open roles in this specialty | 55 | 266 |
| Open roles in the wider Analog & Mixed-Signal family | 109 | 1541 · 115 employers |
| Median days open | 45 d | 52 d (−7 d vs this employer) |
| Median salary (USD postings) | — | $166k |
Skills observed across this category: MMIC, GaN, GaAs, power amplifier, ADS, HFSS
Who's hiring in this category
- Skyworks (this employer) · 55 open roles · median 45 d
- Apple · 39 open roles · median 18 d
- Keysight Technologies · 32 open roles · median 69 d
- Qualcomm · 22 open roles · median 112 d
- MACOM · 17 open roles · median 11 d
- Analog Devices · 12 open roles · median 70 d
How we counted: 266 open RF/Wireless Engineering (RF Frontend) roles from 36 employers tracked in the SemiconductorJobs index, counted 8 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there — it is counted in the wider Analog & Mixed-Signal family row. Figures refresh nightly.