Process & Device Engineering
$135,900 - $295,000 USD yearly
Lead compound semiconductor device development focusing on GaN, GaAs, and InP technologies.
About the role
This role leads device technology roadmaps, guiding the development, release, and adoption of advanced semiconductor device solutions. The technical focus centers on compound semiconductor devices, particularly GaN, with complementary work in GaAs and InP.
What you'll do
- Advance the device technology roadmap across all phases from conception to release to adoption.
- Apply a data-driven approach to risk assessment, decision-making, and separating noise from truth throughout technology development.
- Partner across R&D device development, integration and operations, RF modeling, circuit design, and reliability engineering teams.
- Deliver detailed technical talks for engineering teams and strategic overviews for business stakeholders, including business development, marketing, and sales.
What you'll need
- BSEE degree with a minimum of 5-10+ years of relevant work experience.
- Strong theoretical foundation in semiconductor physics and device engineering.
- Extensive hands-on experience developing and releasing advanced device technologies, particularly GaN, with complementary expertise in GaAs, InP, and other compound semiconductors.
- Demonstrated ability to interact with and influence cross-functional teams spanning R&D, operations, RF modeling, and circuit design.
Nice to have
- Experience writing software, analyzing complex datasets, setting up new test systems, and performing measurements.
- Established record in the device technology community, such as IEEE reviewer, conference chair/co-chair, committee member, or invited speaker.
Skills: Device engineering, GaN, GaAs, InP, Semiconductor physics, Device development
More semiconductor jobs: Device engineer jobs