SiC Power Device Research Scientist - Design - Durham, North Carolina, United States
Process & Device Engineering
Originally posted 15 September 2026 by the employer — open 0 days.
About the role
You will participate in all aspects of SiC power device development with an emphasis on device design.
What you'll do
- Lead device development efforts in high performance SiC power switching devices.
- Participate in device concept development for SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors.
- Perform Design of Experiment (DoE) activities for performance optimization of commercial SiC power devices.
- Provide optimum device designs considering manufacturability and reliability.
- Perform hands-on characterization of experimental devices and data analysis.
- Deliver device designs with optimal characteristics for target applications, interacting with various teams.
What you'll need
- Ph.D. in Electrical Engineering, Solid State Physics, or closely related area.
- Strong understanding of semiconductor device physics.
- Experience in hands-on characterization of power semiconductor devices.
- Working knowledge of commercial TCAD tools.
- Working knowledge of CAD layout tools.
- Understanding of semiconductor fabrication processes and process integration.
- Understanding of semiconductor device characterization methods.
- Design of experiments and data interpretation skills.
Nice to have
- 5 – 10 years of industrial experience in power device development.
- Experience in low voltage discrete vertical silicon power MOSFET development.
Skills: SiC power devices, MOSFETs, JFETs, IGBTs, device physics, TCAD