Senior Staff / Staff Engineer – GaN Technologist, Technology Development - San Jose, California, United States
$140,000 - $210,000 USD yearly
This role focuses on advancing lateral GaN HEMT device technology.
About the role
This role drives the development of high-voltage GaN technologies for power conversion applications, focusing on advancing lateral GaN HEMT device technology to improve performance, manufacturability, reliability, and scalability.
What you'll do
- Lead the development and optimization of high-voltage GaN HEMT technologies.
- Define and execute technology development roadmaps for GaN-based power devices.
- Analyze device physics, failure mechanisms, and reliability behavior.
- Collaborate with process integration teams to develop and qualify new device architectures.
- Develop TCAD simulations and analytical models to support device optimization.
- Support technology transfer from research and development into product development.
What you'll need
- Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related discipline.
- Minimum of 10 years of experience in semiconductor device development with GaN technologies.
- Deep understanding of high-voltage GaN HEMT device physics and operation.
- Demonstrated experience developing, characterizing, and qualifying GaN power semiconductor technologies.
- Strong background in semiconductor process technology, device characterization, reliability, and failure analysis.
- Experience interpreting electrical, physical, and reliability data.
Nice to have
- Experience with lateral high-voltage GaN technologies (>650V).
- Experience with TCAD simulation tools and advanced device modeling techniques.
- Prior experience with HV BCD process development, design rule definitions, and ESD protection.
- Familiarity with power conversion applications.
- Track record of patents, publications, and industry-recognized technical contributions.
- Experience working with external foundries and technology development partners.
Skills: GaN HEMT, high-voltage, device physics, TCAD simulations, power semiconductor
This role has been open 0 days — well below the 86-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
51
|
Median days open
86 d
|
Median salary
—
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See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Power Integrations | All employers we track in this specialty (51 roles · 20 employers) |
|---|---|---|
| Open roles in this specialty | 1 | 51 |
| Median days open | 0 d | 86 d (−86 d vs this employer) |
| Median salary (USD postings) | — | — |
Skills observed across this category: GaN HEMT, high-voltage, device physics, TCAD simulations, power semiconductor
Who's hiring in this category
- Infineon Technologies · 6 open roles · median 54 d
- Lumentum · 6 open roles · median 73 d
- Coherent Corp · 5 open roles · median 90 d
- onsemi · 4 open roles · median 86 d
- Semtech · 4 open roles · median 93 d
- Texas Instruments · 4 open roles · median 7 d
How we counted: 51 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 20 employers tracked in the SemiconductorJobs index, counted 18 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.