$225,000 - $275,000 USD yearly
Focus on LV/MV/HV power GaN device and epi/process architecture scaling from 150 mm to 200 mm.
About the role
The Senior Director of GaN Technology leads strategic R&D vision and epi/device/process architecture development activities for LV/MV/HV GaN power devices at Navitas. This role manages relationships with external foundries and steers technology roadmaps from concept to high-volume production across GaNFast™ power IC platforms.
What you'll do
- Define the long-term technical roadmap for GaN devices across material science, device/process design, and electrical performance.
- Lead GaN technology teams as the primary point of contact for low-voltage, medium-voltage, and high-voltage power GaN development on current and future platforms.
- Collaborate with external US and global foundries to direct wafer fabrication, process technology development, and yield engineering.
- Partner with New Product Introduction (NPI) teams to ensure GaN products meet quality, cost, and time-to-market targets.
- Work with internal teams and OSAT partners on packaging developments, including Ag-sintering, flip-chip, and embedding, to optimize thermal and electrical performance.
- Direct GaN-specific reliability modeling, design of experiments (DOE) test methods, and TCAD simulations for product verification.
What you'll need
- PhD degree in Electrical Engineering, Physics, or equivalent.
- 10+ years in semiconductor R&D with a focus on GaN technology, power devices, and wide-bandgap physics (SiC, GaN).
- Experience scaling 150 mm to 200 mm power GaN technology.
- In-depth knowledge of GaN materials, epitaxial growth, device physics, and characterization techniques.
- Strong data analytics skills and exposure to machine learning for test optimization.
- Experience working with external test houses and test equipment suppliers.
Nice to have
- Demonstrated experience working with external foundries.
Skills: GaN, SiC, gallium nitride, silicon carbide, power devices, epi/device/process architecture
More semiconductor jobs: GaN and SiC jobs
This role has been open 215 days — well above the 37-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
79
|
Median days open
37 d
|
Category median salary (all employers)
$127k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Navitas Semiconductor | All employers we track in this specialty (79 roles · 25 employers) |
|---|---|---|
| Open roles in this specialty | 2 | 79 |
| Median days open | 119 d | 37 d (+82 d vs this employer) |
| Median salary (USD postings) | — | $127k |
Skills observed across this category: GaN, SiC, gallium nitride, silicon carbide, power devices, epi/device/process architecture
Who's hiring in this category
- Infineon Technologies · 10 open roles · median 31 d
- MACOM · 10 open roles · median 11 d
- Lumentum · 8 open roles · median 118 d
- Coherent Corp · 7 open roles · median 137 d
- Texas Instruments · 5 open roles · median 57 d
- Nexperia · 4 open roles · median 138 d
How we counted: 79 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 25 employers tracked in the SemiconductorJobs index, counted 8 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.