Originally posted 6 April 2026 by the employer.
About the role
As an HBM Memory Design Engineer within the HBM Architecture Team, you will design, simulate, and optimize digital and analog DRAM circuits for high-bandwidth memory products. The work spans DRAM design, TSV-based 3D integration, and high-speed mixed-signal architectures supporting Machine Learning and AI applications.
What you'll do
- Design and analyze digital, analog, and mixed-signal circuits for HBM DRAM products. - Perform schematic entry, simulation, and optimization of DRAM blocks including data path, ECC, command control, and clocking circuits. - Evaluate full-chip and block-level functionality to ensure functional accuracy. - Conduct pathfinding and feasibility studies for HBM architectures. - Optimize circuit timing, area, power, and complexity across high-speed DRAM designs. - Support design floor planning, layout reviews, and cross-domain integration of memory, logic, and analog circuits.
What you'll need
- BSEE with 7+ years of relevant engineering experience, or MSEE with 5+ years of relevant engineering experience. - Strong knowledge of CMOS circuit design and semiconductor device physics. - Hands-on experience with schematic entry and simulation tools such as Finesim and HSPICE. - Experience with power distribution and power network analysis. - Proficiency with scripting languages such as Python, Tcl, or Perl.
Nice to have
- Familiarity with DRAM or memory design fundamentals.
Skills: HBM DRAM, digital circuits, analog circuits, mixed-signal circuits, CMOS circuit design, DRAM blocks
This role has been open 222 days — well above the 71-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
309
|
Median days open
71 d
|
Median salary
$200k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (309 roles · 31 employers) |
|---|---|---|
| Open roles in this specialty | 157 | 309 |
| Median days open | 91 d | 71 d (+20 d vs this employer) |
| Median salary (USD postings) | — | $200k |
Skills observed across this category: HBM DRAM, digital circuits, analog circuits, mixed-signal circuits, CMOS circuit design, DRAM blocks
Who's hiring in this category
- Micron Technology (this employer) · 157 open roles · median 91 d
- Synopsys · 30 open roles · median 67 d
- Qualcomm · 19 open roles · median 88 d
- Broadcom · 17 open roles · median 68 d
- SanDisk · 17 open roles · median 54 d
- NVIDIA · 7 open roles · median 34 d
How we counted: 309 open Memory Design (Memory Design) roles from 31 employers tracked in the SemiconductorJobs index, counted 27 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.