Pixel Design Engineer – Process R&D - Santa Clara, California, United States

Originally posted 12 February 2026 by the employer.

Work on pixel architecture and fabrication process optimization for CMOS Image Sensors (CIS) and LCOS technologies.

About the role

As a Pixel Design Engineer within the Process R&D team, you will focus on pixel architecture and process optimization. The role involves developing simulation methodologies and pixel architectures for CMOS Image Sensors (CIS) and Liquid Crystal on Silicon (LCOS) display technologies.

What you'll do

- Optimize pixel structures and fabrication processes to improve electrical and optical performance and efficiency. - Develop, enhance, and validate simulation methodologies for CIS pixel optimization and system-level modeling. - Collaborate with process integration and design teams to develop pixel architectures for applications including Phase Detect (PD), Dual Pixel Detection (DPD), Near-Infrared (NIR), Time-of-Flight (ToF), and LCOS. - Partner with system engineering and architecture teams to model and optimize devices, components, and full systems leveraging OVT sensors and display technologies. - Contribute to sensor and display performance through data-driven modeling and cross-functional R&D.

What you'll need

- MSEE, MS in Physics, or equivalent qualification. - 5+ years of experience in pixel optimization and performance enhancement. - 5+ years of experience in device-based technologies, including the development of advanced semiconductor processes. - Background in simulation tools and semiconductor device physics. - Demonstrated experience working cross-functionally in R&D environments.

Nice to have

- PhD in Electrical Engineering, Physics, or an equivalent field. - CIS process experience.

Skills: pixel structures, fabrication processes, CIS pixel optimization, semiconductor processes, device physics, CMOS Image Sensor