Originally posted 3 June 2026 by the employer.
About the role
A GaN Process Development Engineer is responsible for direct hands-on development of GaN unit processes and loop integration to support volume production of power electronics products as part of the Advanced Technology Development group.
What you'll do
- Execute hands-on process development in the fab from conception to qualification, including MOCVD GaN epitaxy unit process definition, recipe development, metrology requirements, and process control setup. - Develop robust, manufacturable GaN unit processes and integration flows to support GaN technology products and meet electrical requirements. - Formulate design of experiments and perform statistical analysis of data to optimize process recipes and chamber matching. - Correlate device output electrical data to process and material inputs to drive device performance, reliability, and robustness. - Analyze and correlate process and metrology output data to equipment input data to improve manufacturability and cost. - Partner with equipment, process, integration, component, reliability, and Test & Product engineers alongside material and equipment suppliers.
What you'll need
- Master's degree in Chemical Engineering, Materials Science, Chemistry, Physics, or Electrical Engineering. - 3 years of experience with MOCVD GaN epitaxy growth and related semiconductor materials and characterization/analysis. - Knowledge of semiconductor unit process development, loop integration, and semiconductor manufacturing. - Knowledge of GaN and semiconductor device physics. - Strong knowledge of SPC methodology for process control and monitoring. - Demonstrated experience in statistical design of experiments and analysis of large data sets.
Nice to have
- PhD in Chemical Engineering, Materials Science, Chemistry, Physics, or Electrical Engineering. - Knowledge of III-V HEMT device physics, materials, and processing. - Experience in growing GaN epi for Power HEMTs and/or RF GaN. - Knowledge of Machine Learning and AI use.
Skills: MOCVD GaN epitaxy, GaN unit processes, wide-band gap materials, III-V HEMT, process control
This role has been open 142 days — well above the 60-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
65
|
Median days open
60 d
|
Median salary
—
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Texas Instruments | All employers we track in this specialty (65 roles · 25 employers) |
|---|---|---|
| Open roles in this specialty | 4 | 65 |
| Median days open | 43 d | 60 d (−17 d vs this employer) |
| Median salary (USD postings) | — | — |
Skills observed across this category: MOCVD GaN epitaxy, GaN unit processes, wide-band gap materials, III-V HEMT, process control
Who's hiring in this category
- Infineon Technologies · 10 open roles · median 59 d
- Coherent Corp · 7 open roles · median 122 d
- Lumentum · 6 open roles · median 109 d
- STMicroelectronics · 4 open roles · median 69 d
- Texas Instruments (this employer) · 4 open roles · median 43 d
- Keysight Technologies · 3 open roles · median 39 d
How we counted: 65 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 25 employers tracked in the SemiconductorJobs index, counted 24 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.
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