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Micron Technology

Memory Design Engineer, HBM - Richardson, TX, United States

Micron Technology Richardson, TX, United States Full-time 6 months ago
Digital Design & SoC Architecture

Originally posted 4 May 2026 by the employer. Relisted by the employer on 5 May 2026.

Design and optimize DRAM circuits using FINESIM, HSPICE, Cadence Virtuoso, and VERILOG.

About the role

As a Memory Design Engineer at Micron Technology, you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products. The role focuses on designing, simulating, and optimizing DRAM circuits while supporting silicon-to-system development.

What you'll do

- Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution. - Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership. - Conduct circuit simulations using FINESIM, HSPICE, and VERILOG to analyze power, performance, reliability, and parasitic impacts. - Validate builds through reticle experiments, tape-out revisions, and simulation-to-silicon correlation, identifying required schematic edits. - Lead layout resources, track project tasks, and serve as the technical point of contact for design, layout, verification, and test issues. - Collaborate with global verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality.

What you'll need

- Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, with understanding of device reliability and circuit floor planning. - Proficiency with Cadence Virtuoso, and experience simulating with FINESIM, HSPICE, and VERILOG. - Expertise in DRAM subsystem architecture, specification, operation, or design, including cross-department technical leadership experience. - Validated record of technical contributions in circuit design and problem-solving.

Nice to have

- BS or MS in Electrical Engineering or related field plus 3 years of experience in DRAM design, product, or system. - Deep knowledge of industry-specific technologies and competitive trends.

Skills: DRAM circuits, CMOS logic, digital/analog circuits, floorplans, circuit simulations, memory products

Market context

This role has been open 222 days — well above the 71-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
309
Median days open
71 d
Median salary
$200k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How Micron Technology compares in Memory Design hiring
Metric Micron Technology All employers we track in this specialty (309 roles · 31 employers)
Open roles in this specialty 157 309
Median days open 91 d 71 d (+20 d vs this employer)
Median salary (USD postings) — $200k

Skills observed across this category: DRAM circuits, CMOS logic, digital/analog circuits, floorplans, circuit simulations, memory products

Who's hiring in this category

  • Micron Technology (this employer) · 157 open roles · median 91 d
  • Synopsys · 30 open roles · median 67 d
  • Qualcomm · 19 open roles · median 88 d
  • Broadcom · 17 open roles · median 68 d
  • SanDisk · 17 open roles · median 54 d
  • NVIDIA · 7 open roles · median 34 d

How we counted: 309 open Memory Design (Memory Design) roles from 31 employers tracked in the SemiconductorJobs index, counted 27 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

Apply now
Richardson, TX, United States
On-site
Full-time
6 months ago

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