Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer - Scottsdale, AZ, United States
Originally posted 22 September 2026 by the employer — open 0 days.
About the role
This role involves the architecture, design, simulation, and optimization of power silicon MOSFETs, with a primary focus on shielded gate structures.
What you'll do
- Drive the architecture and optimization of low-voltage to medium-voltage silicon power MOSFETs, focusing on shielded gate trench structures.
- Utilize the Synopsys TCAD platform (Sentaurus) to perform 2D/3D process and device simulations.
- Define layout design rules, create device structures, and collaborate on mask layouts for prototype fabrication.
- Partner with process integration engineers to define process flows, design rules, and process variations.
- Analyze electrical test data from inline monitoring, parametric testing (PCM), and lab characterization to validate Synopsys TCAD models.
What you'll need
- Ph.D. in Electrical Engineering, Semiconductor Sciences, Materials Science, or a closely related discipline, with a research focus directly tied to power semiconductor devices.
- 3+ years of post-degree industrial or advanced academic research experience in silicon power MOSFET design and development.
- Deep theoretical understanding of semiconductor device physics, carrier transport, breakdown mechanisms, and power MOSFET dynamics (UIS, safe operating area, switching behavior).
- Expertise using the Synopsys TCAD suite for comprehensive process integration emulation and electrical device characterization.
Nice to have
- Experience with discrete power packaging technologies and their impact on device parasitic elements.
- Familiarity with reliability mechanisms specific to shielded gate power devices, such as shield oxide integrity, electromigration, and high-temperature stress testing (HTGB/HTRB).
- Knowledge of power electronics applications to better align device specifications with system-level requirements.
Skills: power MOSFETs, shielded gate, Synopsys TCAD, device physics, electrical characterization
This role has been open 0 days — well below the 46-day median for Device Engineering roles.
Device Engineering · Device Physics
|
Open roles in category
144
|
Median days open
46 d
|
Median salary
$170k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | onsemi | All employers we track in this specialty (144 roles · 35 employers) |
|---|---|---|
| Open roles in this specialty | 5 | 144 |
| Median days open | 32 d | 46 d (−14 d vs this employer) |
| Median salary (USD postings) | — | $170k |
Skills observed across this category: power MOSFETs, shielded gate, Synopsys TCAD, device physics, electrical characterization
Who's hiring in this category
- GlobalFoundries · 22 open roles · median 91 d
- Micron Technology · 19 open roles · median 77 d
- Renesas Electronics · 17 open roles · median 40 d
- STMicroelectronics · 10 open roles · median 27 d
- Infineon Technologies · 8 open roles · median 32 d
- QORVO · 6 open roles · median 22 d
How we counted: 144 open Device Engineering (Device Physics) roles from 35 employers tracked in the SemiconductorJobs index, counted 22 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.