Intern - Advanced DRAM Cell & Device Technology - Boise, ID - Main Site, United States
Originally posted 2 September 2026 by the employer.
Develop and characterize advanced DRAM cell and access device technologies.
About the role
As an intern in the Advanced DRAM Device & Cell Technology team, you will contribute to the development and characterization of future DRAM cell and access device technologies. This position combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability.
What you'll do
- Support evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes.
- Design and implement silicon experiments; perform electrical, physical, and materials characterization along with statistical analysis.
- Analyze device- and array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, leakage behavior, and read/write operation interactions.
- Collaborate with modeling, design, process integration, and manufacturing teams to understand device behavior, support technology optimization, and contribute to technology development activities.
- Apply AI-Assisted and Generative AI tools to enhance data analysis, workflow efficiency, and technical decision-making.
What you'll need
- Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field (cannot graduate prior to September 2027).
- Demonstrated understanding of semiconductor fundamentals, including device physics, materials science, characterization techniques, and concepts relevant to advanced memory technologies.
- Experience with electrical characterization, device testing, statistical analysis, and interpretation of experimental or simulation data sets.
- Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
- Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms, along with familiarity with AI-assisted engineering and data analysis tools.
Nice to have
- Experience in DRAM or NAND device development, characterization, or technology research.
- Hands-on experience with semiconductor materials characterization, process development, thin film engineering, interface engineering, TCAD simulation, and/or advanced memory technology research.
- Knowledge of semiconductor fabrication processes, advanced BEOL integration, reliability mechanisms, and device variation analysis.
- Experience conducting independent research projects and effectively communicating technical results.
- Experience using AI, Large Language Models (LLMs), AI-enabled analytics, or AI-supported engineering workflows to improve research productivity and technical insights.
Skills: DRAM cell, access devices, materials systems, electrical characterization, device physics
This role has been open 32 days — well below the 69-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
287
|
Median days open
69 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (287 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 153 | 287 |
| Median days open | 86 d | 69 d (+17 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: DRAM cell, access devices, materials systems, electrical characterization, device physics
Who's hiring in this category
- Micron Technology (this employer) · 151 open roles · median 86 d
- Synopsys · 27 open roles · median 49 d
- SanDisk · 17 open roles · median 32 d
- Broadcom · 16 open roles · median 50 d
- Qualcomm · 12 open roles · median 149 d
- NVIDIA · 7 open roles · median 59 d
How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.