Director, Ultra-High-Voltage SiC Device Technology
$200,000 - $250,000 USD yearly
Navitas Semiconductor develops GeneSiC™ high-voltage SiC devices.
About the role
This role involves owning the device and process technology for Navitas Semiconductor's ultra-high-voltage SiC roadmap, from 3.3 kV to 10 kV and beyond. The focus is on GeneSiC™ high-voltage SiC devices leveraging patented trench-assisted planar technology.
What you'll do
- Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+) including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.
- Serve as technical lead and principal investigator on U.S. government-funded development programs, defining technical plans and owning deliverables.
- Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners.
- Direct device simulation (TCAD), mask design reviews and characterization plans, translating results into design and process changes.
- Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with reliability and test teams.
- Build Navitas' intellectual property through patents and support customers and business units on ultra-high-voltage product definition.
What you'll need
- Ph.D. in Electrical Engineering, Physics, Materials Science or a related field.
- 12+ years of industrial or national-lab research and development in SiC power devices, with a focus on ultra-high-voltage switches.
- Demonstrated design, fabrication and characterization of SiC devices rated 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors or PiN diodes.
- Hands-on depth in SiC process technology: implantation, oxidation, ohmic contacts, etching and edge termination.
- Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting and milestone delivery.
- A strong record of publications and/or patents in SiC power devices.
Nice to have
- Experience with SiC integrated circuits or high-temperature SiC electronics.
- Experience with bipolar SiC devices and their reliability, such as bipolar degradation and basal plane dislocation control.
- Experience with U.S. Department of Defense or Department of Energy programs.
- Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.
- Experience leading engineers across multiple sites and time zones.
Skills: SiC device technology, MOSFETs, PiN diodes, JFETs, TCAD, process modules
More semiconductor jobs: GaN and SiC jobs
This role has been open 22 days — well below the 37-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
79
|
Median days open
37 d
|
Category median salary (all employers)
$127k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Navitas Semiconductor | All employers we track in this specialty (79 roles · 25 employers) |
|---|---|---|
| Open roles in this specialty | 2 | 79 |
| Median days open | 119 d | 37 d (+82 d vs this employer) |
| Median salary (USD postings) | — | $127k |
Skills observed across this category: SiC device technology, MOSFETs, PiN diodes, JFETs, TCAD, process modules
Who's hiring in this category
- Infineon Technologies · 10 open roles · median 31 d
- MACOM · 10 open roles · median 11 d
- Lumentum · 8 open roles · median 118 d
- Coherent Corp · 7 open roles · median 137 d
- Texas Instruments · 5 open roles · median 57 d
- Nexperia · 4 open roles · median 138 d
How we counted: 79 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 25 employers tracked in the SemiconductorJobs index, counted 8 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.