Design/Senior Design Engineer – NAND Core (NVE Engineering) - Avezzano (AQ), Italy
$34,000 - $57,000 USD yearly
Originally posted 10 June 2026 by the employer.
This role focuses on the design and optimization of analog, digital and mixed-signal circuits for advanced NAND Flash memory products.
About the role
As a Design Engineer in the NVE Design Engineering Core group at Micron Semiconductor Italia, you will contribute to the development of memory products. This role specifically focuses on the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products.
What you'll do
- Design, simulate, and optimize NAND core circuit blocks, balancing performance, power, area, and reliability trade-offs.
- Translate product and system requirements into circuit implementations, evaluating feasibility and functionality across use cases.
- Perform comprehensive circuit verification (DC, AC, transient, noise, Monte Carlo, PVT corners) at block and chip level.
- Collaborate with cross-functional teams to improve power efficiency, manufacturability, and overall product performance.
- Develop and leverage automation solutions (e.g., Python-based workflows, AI-assisted tools) and maintain technical documentation.
What you'll need
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Proven experience in analog and/or mixed-signal CMOS circuit design.
- Solid understanding of device physics, variability, reliability, and power integrity.
- Hands-on experience with SPICE-based simulation tools and circuit verification methodologies.
Nice to have
- Experience in NAND Flash or other non-volatile memory technologies.
- Familiarity with design automation, scripting (e.g., Python), or AI-assisted design approaches.
- Understanding of layout constraints and interaction with physical design flows.
Skills: NAND core circuit blocks, analog/mixed-signal CMOS circuit design, device physics, SPICE simulation, non-volatile memory technologies
This role has been open 116 days — well above the 69-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
287
|
Median days open
69 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (287 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 153 | 287 |
| Median days open | 86 d | 69 d (+17 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: NAND core circuit blocks, analog/mixed-signal CMOS circuit design, device physics, SPICE simulation, non-volatile memory technologies
Who's hiring in this category
- Micron Technology (this employer) · 151 open roles · median 86 d
- Synopsys · 27 open roles · median 49 d
- SanDisk · 17 open roles · median 32 d
- Broadcom · 16 open roles · median 50 d
- Qualcomm · 12 open roles · median 149 d
- NVIDIA · 7 open roles · median 59 d
How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.