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Micron Technology

Design Lead (HBM/Advanced Memory Design) - Richardson, TX, United States

Micron Technology Richardson, TX, United States Full-time 6 days ago
Digital Design & SoC Architecture

Originally posted 29 September 2026 by the employer.

Lead architecture, design, integration, and execution of HBM and advanced memory products.

About the role

This role involves leading the architecture, design, integration, and execution of HBM and advanced memory products. You will drive multi-functional collaboration to deliver high-quality silicon.

What you'll do

  • Lead the design and execution of memory subsystems and top-level integration activities.
  • Own design planning, technical decision-making, risk assessment, and schedule execution.
  • Coordinate with architecture, verification, layout, DFT, and product engineering teams.
  • Drive memory array design, including address decoders, data path, internal power supplies, and custom circuit design.
  • Lead design reviews and issue resolution across organizations.
  • Support silicon bring-up, debug, characterization, and yield improvement activities.

What you'll need

  • BS/MS/PhD in Electrical Engineering, Computer Engineering, or related field.
  • 10+ years of semiconductor design experience.
  • Demonstrated experience leading complex IC development programs.
  • Strong understanding of digital and/or custom circuit design methodologies.
  • Experience with Memory Array Design, address decoders, and Datapath architecture.
  • Experience with Power Delivery and repair schemes.
  • Experience with Verification and debug flows.
  • Experience with DFT and silicon validation.
  • Experience with Power, performance, area, and thermal optimization.

Nice to have

  • Experience with DRAM, DDR, HBM, LPDDR, or advanced memory products.
  • Experience leading global multi-functional teams.
  • Knowledge of advanced process nodes and design-for-manufacturing concepts.
  • Experience with Synopsys and Cadence implementation flows.
  • Familiarity with package integration, 2.5D/3D stacking, TSV, and advanced packaging technologies.
  • Track record of successful product tape-outs.

Skills: memory array design, address decoders, datapath architecture, HBM, 2.5D/3D stacking

Market context

This role has been open 5 days — well below the 69-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
287
Median days open
69 d
Median salary
$205k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How Micron Technology compares in Memory Design hiring
Metric Micron Technology All employers we track in this specialty (287 roles · 29 employers)
Open roles in this specialty 153 287
Median days open 86 d 69 d (+17 d vs this employer)
Median salary (USD postings) — $205k

Skills observed across this category: memory array design, address decoders, datapath architecture, HBM, 2.5D/3D stacking

Who's hiring in this category

  • Micron Technology (this employer) · 151 open roles · median 86 d
  • Synopsys · 27 open roles · median 49 d
  • SanDisk · 17 open roles · median 32 d
  • Broadcom · 16 open roles · median 50 d
  • Qualcomm · 12 open roles · median 149 d
  • NVIDIA · 7 open roles · median 59 d

How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

Apply now
Richardson, TX, United States
On-site
Full-time
6 days ago

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