Design Engineer - Avezzano (AQ), Italy
$34,000 - $57,000 USD yearly
Originally posted 1 October 2026 by the employer.
This role focuses on datapath architectures and high-speed interfaces within NAND Flash memory products.
About the role
As a Design Engineer, you will contribute to the development of NAND Flash memory products, focusing on datapath architectures and high-speed interfaces. This involves supporting the design, optimization, and validation of NAND datapath logic and DDR high-speed interfaces at block and sub-system levels, contributing to full-chip integration.
What you'll do
- Design and optimize high-speed datapath and interface circuits, ensuring timing closure and performance at block and sub-system level.
- Translate system and interface requirements into circuit architectures and transistor-level implementations, balancing performance, power, and area.
- Perform functional, timing, and signal integrity verification using advanced simulation methodologies.
- Collaborate with multi-functional teams to ensure accurate floorplan integration, manufacturability, and alignment with product specifications.
- Develop and apply automation solutions and support silicon validation, debug, and documentation.
What you'll need
- M.S. or Ph.D. in Electrical Engineering, Electronics, or a related field.
- Strong knowledge of high-speed digital, analog, and mixed-signal CMOS circuit design.
- Solid understanding of timing, signal integrity, noise, variability, and deep-submicron device effects.
- Hands-on experience with industry-standard simulation tools (e.g., SPICE, mixed-signal, RTL/Verilog-based flows).
Nice to have
- Experience in NAND Flash or other non-volatile memory technologies.
- Experience with high-speed interfaces (e.g., DDR, LPDDR, GDDR, or SerDes).
- Familiarity with design automation, scripting (e.g., Python), or AI-assisted design approaches.
- Understanding of layout constraints, physical design flows, and ESD considerations.
Skills: NAND Flash memory, datapath architectures, high-speed interfaces, CMOS circuit design, timing closure, signal integrity
This role has been open 3 days — well below the 69-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
287
|
Median days open
69 d
|
Median salary
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Micron Technology | All employers we track in this specialty (287 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 153 | 287 |
| Median days open | 86 d | 69 d (+17 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: NAND Flash memory, datapath architectures, high-speed interfaces, CMOS circuit design, timing closure, signal integrity
Who's hiring in this category
- Micron Technology (this employer) · 151 open roles · median 86 d
- Synopsys · 27 open roles · median 49 d
- SanDisk · 17 open roles · median 32 d
- Broadcom · 16 open roles · median 50 d
- Qualcomm · 12 open roles · median 149 d
- NVIDIA · 7 open roles · median 59 d
How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.