Wide Bandgap Device/PI Engineer (R&D) - Dallas, TX, United States
Originally posted 17 September 2026 by the employer — open 2 days.
About the role
This role involves leading the development, characterization, and optimization of gallium nitride (GaN) power devices.
What you'll do
- Perform GaN device simulations (TCAD), device design, and layout.
- Develop robust process flows and drive design-of-experiment (DOE) execution.
- Collaborate with fab/manufacturing engineers to ensure device manufacturability.
- Collaborate with reliability engineers to meet device reliability requirements.
- Conduct failure root-cause investigation for device/process/reliability/yield improvement.
What you'll need
- Master's in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree.
- 3+ years of hands-on experience in GaN or compound semiconductor device/process development.
- Strong knowledge of semiconductor processing, especially in III-V materials.
- Experience with process integration, DOE planning, electrical characterization, and failure analysis.
- Strong understanding of power FETs and other relevant semiconductor device physics.
- Strong understanding of analog silicon and GaN high electron mobility transistor (HEMT) process flows and underlying process physics.
- Strong understanding of electrical and materials characterization methodologies and statistical data analysis.
Nice to have
- PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree.
- Familiarity with GaN-on-Silicon technology for power switching applications.
- Experience with fab tools and process modules/Integration.
- Knowledge of device physics, reliability mechanisms, and packaging interaction.
Skills: III-nitride materials, GaN device simulations, process flows, GaN high electron mobility transistor (HEMT), GaN-on-Silicon
This role has been open 1 day — well below the 84-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
52
|
Median days open
84 d
|
Median salary
—
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Texas Instruments | All employers we track in this specialty (52 roles · 21 employers) |
|---|---|---|
| Open roles in this specialty | 4 | 52 |
| Median days open | 8 d | 84 d (−76 d vs this employer) |
| Median salary (USD postings) | — | — |
Skills observed across this category: III-nitride materials, GaN device simulations, process flows, GaN high electron mobility transistor (HEMT), GaN-on-Silicon
Who's hiring in this category
- Infineon Technologies · 6 open roles · median 55 d
- Lumentum · 6 open roles · median 74 d
- Coherent Corp · 5 open roles · median 91 d
- onsemi · 4 open roles · median 87 d
- Semtech · 4 open roles · median 94 d
- Texas Instruments (this employer) · 4 open roles · median 8 d
How we counted: 52 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 21 employers tracked in the SemiconductorJobs index, counted 19 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.