$20 - $40 USD yearly
Originally posted 28 September 2026 by the employer.
Work with our Technology Development team in advancing semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9).
About the role
This role involves semiconductor process and device development with the Technology Development team, focusing on new process flows and devices in RF GaN technologies. You will contribute to GaN HEMT development for RF applications in our Vermont (FAB9) manufacturing fabricator.
What you'll do
- Innovate with device, test, and process integration teams to define, design, and set up process modules and integration, including in-line physical and electrical measurement structures. - Collaborate to organize, run, and analyze experiments for GaN technology to meet performance, reliability, yield, and cost objectives. - Collaborate with Fab9 engineering teams including testing, failure analysis, unit module process, reliability, manufacturing, modeling, and TCAD simulation. - Work with technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available. - Collaborate on physical and electrical device simulation and final characterization analysis to meet device performance, including DC/AC and RF test and analysis of discrete electrical devices. - Support technology development qualification milestones from conception through manufacturing installation.
What you'll need
- Actively pursuing a Masters or Ph.D. in Electrical Engineering or Solid State Physics or related field. - Basic knowledge of modern semiconductor device physics, device characterization, and semiconductor processing with emphasis on wide band gap materials like the III-N material system. - Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication. - Overall 3.0 GPA and in good academic standing. - Ability to work at least 40 hours per week during the internship.
Nice to have
- Prior related internship or co-op experience. - Educational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures), including associated electrical test and analysis methods. - Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices. - Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design, and analysis techniques. - Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF. - Experience in fabrication and electrical characterization of GaN HEMT devices.
Skills: RF GaN, GaN HEMT, III-N material system, device characterization, semiconductor process
This role has been open 5 days — well below the 83-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
54
|
Median days open
83 d
|
Median salary
—
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See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | GlobalFoundries | All employers we track in this specialty (54 roles · 23 employers) |
|---|---|---|
| Open roles in this specialty | 1 | 54 |
| Median days open | 5 d | 83 d (−78 d vs this employer) |
| Median salary (USD postings) | — | — |
Skills observed across this category: RF GaN, GaN HEMT, III-N material system, device characterization, semiconductor process
Who's hiring in this category
- Infineon Technologies · 7 open roles · median 57 d
- Coherent Corp · 5 open roles · median 106 d
- Lumentum · 5 open roles · median 96 d
- Texas Instruments · 5 open roles · median 22 d
- onsemi · 4 open roles · median 43 d
- Nexperia · 3 open roles · median 103 d
How we counted: 54 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 23 employers tracked in the SemiconductorJobs index, counted 4 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.