Originally posted 26 May 2026 by the employer.
Lead the development of III-V process nodes for InP and GaAs technologies.
About the role
This role involves leading the definition and development of new III-V process nodes for InP and GaAs technologies.
What you'll do
- Lead definition and development of new III-V process nodes for InP and GaAs technologies. - Drive unit process development across epitaxy (MBE/MOCVD), lithography, etch, deposition, CMP, implant, and backend steps. - Lead process technology transfers during development to volume manufacturing. - Partner with Process Engineering, Equipment Engineering, R&D, Quality, and Operations. - Lead external collaborations with equipment suppliers, material vendors, and research partners.
What you'll need
- Master’s or PhD in a relevant discipline. - Expertise in MOCVD/MBE epitaxy, III-V device fabrication, or photonics/RF process integration. - 10 years of experience in semiconductor process engineering or technology development. - Deep knowledge of III-V semiconductor processing—InP, GaAs, or related compound semiconductors. - Strong command of DOE, SPC, and data analysis tools (JMP, Minitab). - Experience leading multi-disciplinary technical programs and vendor engagements.
Skills: III-V process nodes, InP, GaAs, MOCVD/MBE epitaxy, III-V device fabrication, photonics/RF process integration, DOE, SPC