Stage ingénieur : mmW IC Designer Conception d'un amplificateur de puissance RF pour radar automobile évolutif (F/H)
Originally posted 17 September 2026 by the employer — open 1 day.
About the role
This internship focuses on the design of a scalable RF power amplifier for automotive radar applications within the Automotive Embedded Systems Business Line. The project involves developing a Power Amplifier demonstrator for 77 GHz radar transceivers, using new packaging technologies to integrate multiple dies.
What you'll do
- Analyze the target TX architecture, RF specifications, and package constraints.
- Define a comparison methodology for selected CMOS and BiCMOS process options.
- Design or adapt transistor-level test benches for gain, output power, efficiency, stability, noise, and robustness.
- Design and optimize the PA power stage, including matching and biasing choices.
- Assess sensitivity to process, supply voltage, temperature, layout parasitics, and thermal constraints.
- Study the interface with the driver and phase rotator to identify integration constraints.
- Compare implementation options using common performance, area, and cost indicators.
- Document conclusions and present a recommendation to the design team.
What you'll need
- Final-year engineering school or MSc student in electrical engineering, microelectronics, electronics or a related field.
- Good foundation in analog and RF circuit design.
- Interest in integrated circuit design, semiconductor technologies, and design trade-offs.
- Ability to analyze simulation results, document conclusions, and communicate clearly.
- Proactive, structured, and comfortable working in an international team.
- Good written and spoken English.
Nice to have
- Knowledge of microwave or mmWave design.
Skills: mmW IC Designer, RF power amplifier, automotive radar, BiCMOS, transistor-level
This role has been open 1 day — well below the 42-day median for RF/Wireless Engineering roles.
RF/Wireless Engineering · RF Frontend
|
Open roles in category
257
|
Median days open
42 d
|
Median salary
$165k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | NXP Semiconductors | All employers we track in this specialty (257 roles · 34 employers) |
|---|---|---|
| Open roles in this specialty | 9 | 257 |
| Open roles in the wider Analog & Mixed-Signal family | 37 | 1336 · 104 employers |
| Median days open | 59 d | 42 d (+17 d vs this employer) |
| Median salary (USD postings) | — | $165k |
Skills observed across this category: mmW IC Designer, RF power amplifier, automotive radar, BiCMOS, transistor-level
Who's hiring in this category
- QORVO · 49 open roles · median 30 d
- Skyworks · 36 open roles · median 27 d
- Qualcomm · 26 open roles · median 63 d
- Keysight Technologies · 23 open roles · median 170 d
- Apple · 20 open roles · median 15 d
- Analog Devices · 11 open roles · median 34 d
How we counted: 257 open RF/Wireless Engineering (RF Frontend) roles from 34 employers tracked in the SemiconductorJobs index, counted 18 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there — it is counted in the wider Analog & Mixed-Signal family row. Figures refresh nightly.