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NXP Semiconductors

Stage ingénieur : mmW IC Designer Conception d'un amplificateur de puissance RF pour radar automobile évolutif (F/H)

NXP Semiconductors Grenoble, France Internship 18 days ago
RF, Wireless & Photonics

Originally posted 17 September 2026 by the employer.

About the role

This internship focuses on the design of a scalable RF power amplifier for automotive radar applications within the Automotive Embedded Systems Business Line. The project involves developing a Power Amplifier demonstrator for 77 GHz radar transceivers, using new packaging technologies to integrate multiple dies.

What you'll do

  • Analyze the target TX architecture, RF specifications, and package constraints.
  • Define a comparison methodology for selected CMOS and BiCMOS process options.
  • Design or adapt transistor-level test benches for gain, output power, efficiency, stability, noise, and robustness.
  • Design and optimize the PA power stage, including matching and biasing choices.
  • Assess sensitivity to process, supply voltage, temperature, layout parasitics, and thermal constraints.
  • Study the interface with the driver and phase rotator to identify integration constraints.
  • Compare implementation options using common performance, area, and cost indicators.
  • Document conclusions and present a recommendation to the design team.

What you'll need

  • Final-year engineering school or MSc student in electrical engineering, microelectronics, electronics or a related field.
  • Good foundation in analog and RF circuit design.
  • Interest in integrated circuit design, semiconductor technologies, and design trade-offs.
  • Ability to analyze simulation results, document conclusions, and communicate clearly.
  • Proactive, structured, and comfortable working in an international team.
  • Good written and spoken English.

Nice to have

  • Knowledge of microwave or mmWave design.

Skills: mmW IC Designer, RF power amplifier, automotive radar, BiCMOS, transistor-level

Market context

This role has been open 18 days — well below the 51-day median for RF/Wireless Engineering roles.

RF/Wireless Engineering · RF Frontend

Open roles in category
265
Median days open
51 d
Median salary
$162k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How NXP Semiconductors compares in RF/Wireless Engineering hiring
Metric NXP Semiconductors All employers we track in this specialty (265 roles · 34 employers)
Open roles in this specialty 11 265
Open roles in the wider Analog & Mixed-Signal family 48 1387 · 106 employers
Median days open 18 d 51 d (−33 d vs this employer)
Median salary (USD postings) — $162k

Skills observed across this category: mmW IC Designer, RF power amplifier, automotive radar, BiCMOS, transistor-level

Who's hiring in this category

  • QORVO · 46 open roles · median 35 d
  • Skyworks · 41 open roles · median 40 d
  • Keysight Technologies · 24 open roles · median 174 d
  • Qualcomm · 24 open roles · median 102 d
  • Apple · 20 open roles · median 19 d
  • Analog Devices · 12 open roles · median 57 d

How we counted: 265 open RF/Wireless Engineering (RF Frontend) roles from 34 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there — it is counted in the wider Analog & Mixed-Signal family row. Figures refresh nightly.

Apply now
Grenoble, France
On-site
Internship
18 days ago

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