Sr Level Semiconductor Tech High Voltage Analog Device Engineer - South Portland, ME, United States
$143,000 - $219,000 USD yearly
Originally posted 21 September 2026 by the employer — open 0 days.
About the role
This role involves the design, development, and optimization of high voltage LNDMOS power semiconductor devices, focusing on advancing LNDMOS technology for reliable, efficient, and high-performance solutions. The work centers on developing device and process technologies addressing voltages of 7 – 100 V with either junction or deep trench isolation.
What you'll do
- Lead the design of high voltage LNDMOS devices, considering breakdown voltage, on-resistance, charge balance, and ruggedness.
- Utilize CAD and TCAD simulation tools to model electrical, thermal, and reliability characteristics.
- Collaborate with process engineers to define and refine process flows for LNDMOS device fabrication.
- Plan and conduct electrical, thermal, and reliability characterization of fabricated devices, specifically device isolation.
- Research and implement new architectures, materials, and device structures (e.g., trench, RESURF, shielded gate).
- Produce detailed technical documentation, including design specifications, simulation reports, and characterization results.
What you'll need
- Master’s or Doctoral degree in Electrical Engineering, Physics, Materials Science, or a related field with a focus on semiconductor devices or microelectronics.
- 5-10 years of direct experience in power semiconductor device engineering, with emphasis on high voltage LNDMOS or LDMOS design and fabrication.
- Experience designing devices with operating voltages above 30V and possibly as high as 120V.
- Proficiency in device and process simulation tools (e.g., Synopsys Sentaurus, Silvaco Atlas).
- Strong understanding of semiconductor physics, high voltage breakdown mechanisms, device isolation, and reliability phenomena.
- Hands-on experience with wafer fabrication, cleanroom protocols, and device characterization equipment.
Nice to have
- Experience with other power devices (IGBT, SiC/GaN MOSFETs).
- Publications or patents in power devices or LNDMOS technology.
- Proven track record of leading device development projects from concept to mass production.
- Familiarity with automotive, industrial, or renewable energy power electronics applications.
- Experience engaging with customers and stakeholders to translate application needs into device requirements.
Skills: high voltage LNDMOS, TCAD simulation, device characterization, semiconductor physics, device isolation
This role has been open 0 days — well below the 46-day median for Device Engineering roles.
Device Engineering · Device Physics
|
Open roles in category
144
|
Median days open
46 d
|
Median salary
$170k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Diodes Incorporated | All employers we track in this specialty (144 roles · 35 employers) |
|---|---|---|
| Open roles in this specialty | 3 | 144 |
| Median days open | 28 d | 46 d (−18 d vs this employer) |
| Median salary (USD postings) | — | $170k |
Skills observed across this category: high voltage LNDMOS, TCAD simulation, device characterization, semiconductor physics, device isolation
Who's hiring in this category
- GlobalFoundries · 22 open roles · median 91 d
- Micron Technology · 19 open roles · median 77 d
- Renesas Electronics · 17 open roles · median 40 d
- STMicroelectronics · 10 open roles · median 27 d
- Infineon Technologies · 8 open roles · median 32 d
- QORVO · 6 open roles · median 22 d
How we counted: 144 open Device Engineering (Device Physics) roles from 35 employers tracked in the SemiconductorJobs index, counted 22 Sept 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.