SiC Power Device Research Scientist - Design - Durham, North Carolina, United States
Process & Device Engineering
Originally posted 15 September 2026 by the employer.
About the role
You will participate in all aspects of SiC power device development with an emphasis on device design.
What you'll do
- Lead device development efforts in high performance SiC power switching devices.
- Participate in device concept development for SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors.
- Perform Design of Experiment (DoE) activities for performance optimization of commercial SiC power devices.
- Provide optimum device designs considering manufacturability and reliability.
- Perform hands-on characterization of experimental devices and data analysis.
- Deliver device designs with optimal characteristics for target applications, interacting with various teams.
What you'll need
- Ph.D. in Electrical Engineering, Solid State Physics, or closely related area.
- Strong understanding of semiconductor device physics.
- Experience in hands-on characterization of power semiconductor devices.
- Working knowledge of commercial TCAD tools.
- Working knowledge of CAD layout tools.
- Understanding of semiconductor fabrication processes and process integration.
- Understanding of semiconductor device characterization methods.
- Design of experiments and data interpretation skills.
Nice to have
- 5 – 10 years of industrial experience in power device development.
- Experience in low voltage discrete vertical silicon power MOSFET development.
Skills: SiC power devices, MOSFETs, JFETs, IGBTs, device physics, TCAD