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SanDisk

Senior Technologist Datapath Design Engineer and Circuit Design Engineer, VLSI Design Engineering

SanDisk Milpitas, United States Full-time 4 months ago
Digital Design & SoC Architecture Memory & Storage Technologies

$186,900 - $317,800 USD yearly

Originally posted 26 June 2026 by the employer.

About the role

SanDisk is seeking a Senior Technologist Datapath Design Engineer and Circuit Design Engineer, VLSI Design Engineering in Milpitas, United States. The role focuses on transistor-level and gate-level circuit design for 3D NAND flash memory high-speed datapath and page buffer circuits.

What you'll do

  • Architect and design circuits at the transistor level and gate level for 3D NAND flash memory, focusing on high-speed datapath circuit design and page buffer design.
  • Perform block-level and full-chip circuit simulations to meet performance specifications.
  • Execute RTL design, synthesis, static timing analysis, and verification in Verilog for page buffer and datapath control logics.
  • Conduct silicon debugging and evaluation utilizing micro-probing techniques.
  • Collaborate with characterization engineers to characterize silicon and partner with designers to resolve silicon issues.
  • Prepare detailed technical reports and presentations.

What you'll need

  • Master's degree in Electrical Engineering or equivalent with 15 or more years of relevant experience.
  • Knowledge and experience in datapath design (NAND, DRAM, LPDDR, or HBM).
  • Knowledge in decoding concepts and redundancy concepts.
  • Knowledge and experience in NAND page buffer design.
  • Knowledge and experience in RTL design.

Nice to have

  • Experience in non-volatile memory design, specifically NAND flash memory cell operation.
  • Knowledge or experience in high-speed I/O circuits.
  • A strong device background and experience with evaluating new process technologies for use in design.

Skills: 3D NAND, Datapath, Page Buffers, Circuit Design, Transistor Level

More semiconductor jobs: SanDisk jobs

Market context

This role has been open 6 days — well below the 72-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
302
Median days open
72 d
Category median salary (all employers)
$205k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How SanDisk compares in Memory Design hiring
Metric SanDisk All employers we track in this specialty (302 roles · 29 employers)
Open roles in this specialty 15 302
Median days open 6 d 72 d (−66 d vs this employer)
Median salary (USD postings) — $205k

Skills observed across this category: 3D NAND, Datapath, Page Buffers, Circuit Design, Transistor Level

Who's hiring in this category

  • Micron Technology · 154 open roles · median 82 d
  • Synopsys · 30 open roles · median 77 d
  • Qualcomm · 18 open roles · median 106 d
  • Broadcom · 16 open roles · median 78 d
  • SanDisk (this employer) · 15 open roles · median 7 d
  • NVIDIA · 8 open roles · median 59 d

How we counted: 302 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 6 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

SanDisk

SanDisk

Apply now
Milpitas, United States
On-site
Full-time
$186,900 - $317,800 USD yearly
4 months ago

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