Senior Staff / Staff Engineer – GaN Technologist, Technology Development - San Jose, California, United States
$140,000 - $210,000 USD yearly
Originally posted 6 September 2026 by the employer.
About the role
Power Integrations is seeking a Senior Staff / Staff Engineer – GaN Technologist to lead the development and optimisation of high-voltage lateral GaN HEMT technologies for power conversion applications. The role focuses on advancing device performance, manufacturability, reliability, and scalability across multiple voltage classes.
What you'll do
- Lead the development and optimisation of high-voltage GaN HEMT technologies for commercial power semiconductor products. - Define and execute technology development roadmaps for future generations of GaN-based devices. - Improve key device performance metrics, including specific RDS(on), breakdown voltage, switching performance, robustness, and long-term reliability. - Analyse device physics, reliability behaviour, and failure mechanisms to identify opportunities for technology advancement. - Collaborate with process integration teams to develop, qualify, and scale new device architectures and fabrication processes. - Develop and utilise TCAD simulations and analytical models to optimise device performance and technology direction.
What you'll need
- Deep expertise in high-voltage GaN HEMT device physics, operation, and technology development. - Strong understanding of semiconductor process integration, device characterisation, reliability engineering, and failure analysis. - Experience interpreting electrical, physical, and reliability data to drive technology improvements. - Proficiency with TCAD simulation tools and advanced device modelling techniques.
Nice to have
- Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related field. - 10+ years of experience in semiconductor device development, including substantial experience with GaN technologies. - Demonstrated success developing, characterising, and qualifying GaN power semiconductor technologies, including lateral high-voltage GaN technologies (>650V). - Knowledge of HV BCD process development, design rule definition, and ESD protection methodologies. - Familiarity with power conversion applications and system-level implications of semiconductor device technology. - Experience working with external foundries and technology development partners.
Skills: GaN HEMT, high-voltage, device physics, TCAD simulations, power semiconductor
This role has been open 34 days — well below the 71-day median for Compound Semiconductor Engineering roles.
Compound Semiconductor Engineering · Compound Semiconductor
|
Open roles in category
59
|
Median days open
71 d
|
Median salary
—
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | Power Integrations | All employers we track in this specialty (59 roles · 24 employers) |
|---|---|---|
| Open roles in this specialty | 1 | 59 |
| Median days open | 34 d | 71 d (−37 d vs this employer) |
| Median salary (USD postings) | — | — |
Skills observed across this category: GaN HEMT, high-voltage, device physics, TCAD simulations, power semiconductor
Who's hiring in this category
- Infineon Technologies · 9 open roles · median 42 d
- Coherent Corp · 7 open roles · median 120 d
- Lumentum · 6 open roles · median 107 d
- STMicroelectronics · 4 open roles · median 67 d
- Texas Instruments · 4 open roles · median 41 d
- Nexperia · 3 open roles · median 121 d
How we counted: 59 open Compound Semiconductor Engineering (Compound Semiconductor) roles from 24 employers tracked in the SemiconductorJobs index, counted 22 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.