Senior Staff Datapath Design Engineer and Circuit Design Engineer, VLSI Design Engineering
$166,200 - $282,500 USD yearly
Focus on high-speed datapath circuit design and page buffers design for 3D NAND flash memory.
Originally posted 2 September 2026 by the employer.
About the role
This role involves transistor-level and gate-level circuit architecture and design for 3D NAND flash memory within the Memory Technology Group. Focus areas include high-speed datapath circuit design and page buffer design.
What you'll do
- Architect and design circuits at transistor level and gate level for 3D NAND flash memory, focusing on high-speed datapath circuit design and page buffers design.
- Perform block-level and full chip circuit simulations to meet performance specifications.
- Execute RTL design, synthesis, static timing analysis, and verification in Verilog for page buffer and datapath control logics.
- Conduct silicon debugging and evaluation with micro-probing.
- Collaborate with characterization engineers to fully characterize silicon and partner with designers to develop solutions for silicon issues.
- Generate detailed technical reports and presentations.
What you'll need
- Master's degree in Electrical Engineering or equivalent with 12 or more years of relevant experience.
- Knowledge and/or experience in datapath design (NAND, DRAM, LPDDR, or HBM).
- Knowledge of decoding concepts and redundancy concepts.
- Knowledge and/or experience in NAND page buffer design.
- Knowledge and/or experience in RTL design.
Nice to have
- Knowledge and/or experience in non-volatile memory design, specifically NAND flash memory cell operation.
- Knowledge and/or experience in high speed I/O circuits.
- Device background and experience evaluating new process technologies for use in design.
Skills: 3D NAND, datapath, page buffer, transistor-level design, flash memory
More semiconductor jobs: SanDisk jobs
This role has been open 6 days — well below the 72-day median for Memory Design roles.
Memory Design · Memory Design
|
Open roles in category
302
|
Median days open
72 d
|
Category median salary (all employers)
$205k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | SanDisk | All employers we track in this specialty (302 roles · 29 employers) |
|---|---|---|
| Open roles in this specialty | 15 | 302 |
| Median days open | 6 d | 72 d (−66 d vs this employer) |
| Median salary (USD postings) | — | $205k |
Skills observed across this category: 3D NAND, datapath, page buffer, transistor-level design, flash memory
Who's hiring in this category
- Micron Technology · 154 open roles · median 82 d
- Synopsys · 30 open roles · median 77 d
- Qualcomm · 18 open roles · median 106 d
- Broadcom · 16 open roles · median 78 d
- SanDisk (this employer) · 15 open roles · median 7 d
- NVIDIA · 8 open roles · median 59 d
How we counted: 302 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 6 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.