Senior Power FET Development Engineer - Hopewell Junction, NY, United States
$147,000 - $250,000 USD yearly
Originally posted 7 October 2026 by the employer.
About the role
This role involves leading the advancement of innovative discrete power MOSFET and FET technologies from concept through qualification and production ramp. The focus is on improving RDS(on), switching efficiency, power density, ruggedness, and reliability of power devices.
What you'll do
- Lead development of discrete power MOSFET technologies from concept to production.
- Define device architectures and electrical performance targets for power devices.
- Drive device simulation, modeling, characterization, and silicon validation activities.
- Analyze electrical data, yield trends, and reliability results for performance improvement.
- Solve device and process integration issues using DOE, SPC, FMEA, and Six Sigma.
- Evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.
What you'll need
- BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or related technical field.
- Experience developing semiconductor devices, with emphasis on Power MOSFETs, Trench MOSFETs, Super Junction devices, or other discrete power technologies.
- Strong understanding of semiconductor device physics, device reliability, and semiconductor manufacturing processes.
- Experience moving new technologies from development through qualification and volume production.
- Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.
- Experience with data-driven problem solving and statistical analysis techniques.
Nice to have
- High-voltage and high-current power device development.
- 300mm semiconductor manufacturing environments.
- TCAD, SPICE, electro-thermal, or compact modeling tools.
- Wafer-level test, WAT, PCM, probe, and final test methodologies.
- Packaging technologies for discrete power devices, including DFN, TO packages, Copper clip packages, or Power modules.
- AEC-Q101 automotive qualification and reliability testing.
- SiC and GaN power semiconductor technologies.
- Statistical analysis tools such as JMP, Python, or MATLAB.
- Patent development and technology innovation experience.
Skills: power MOSFETs, device architectures, device simulation, SiC, GaN, semiconductor device physics
This role has been open 0 days — well below the 51-day median for Device Engineering roles.
Device Engineering · Device Physics
|
Open roles in category
152
|
Median days open
51 d
|
Median salary
$165k
|
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
| Metric | onsemi | All employers we track in this specialty (152 roles · 35 employers) |
|---|---|---|
| Open roles in this specialty | 4 | 152 |
| Median days open | 31 d | 51 d (−20 d vs this employer) |
| Median salary (USD postings) | — | $165k |
Skills observed across this category: power MOSFETs, device architectures, device simulation, SiC, GaN, semiconductor device physics
Who's hiring in this category
- GlobalFoundries · 24 open roles · median 64 d
- Micron Technology · 22 open roles · median 84 d
- Renesas Electronics · 12 open roles · median 55 d
- Intel Corporation · 11 open roles · median 13 d
- Infineon Technologies · 10 open roles · median 18 d
- STMicroelectronics · 10 open roles · median 42 d
How we counted: 152 open Device Engineering (Device Physics) roles from 35 employers tracked in the SemiconductorJobs index, counted 7 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.