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Micron Technology

Principal Memory Design Engineer, HBM

Micron Technology Richardson, TX, United States Full-time 4 months ago
Digital Design & SoC Architecture Memory & Storage Technologies

HBM

Originally posted 16 July 2026 by the employer.

About the role

As a Principal Memory Design Engineer, you will architect and deliver high-performance DRAM circuit compositions for advanced technology nodes. This role focuses on developing innovation across building, layout, verification, and silicon validation for HBM.

What you'll do

  • Design and optimize DRAM circuits spanning digital, analog, and memory core subsystems.
  • Develop and refine floorplans, routing strategies, and power delivery networks.
  • Perform advanced circuit simulations using FINESIM, HSPICE, and VERILOG.
  • Model parasitics, verify power and signal integrity, and support validation.
  • Drive simulation-to-silicon correlation, identify gaps, and recommend schematic and layout improvements.
  • Lead technical reviews, documentation, and best-practice standardization.

What you'll need

  • BS in Electrical Engineering or related field, or equivalent experience.
  • Strong hands-on expertise with Cadence Virtuoso, physical layout, and circuit floorplanning.
  • Proven experience using FINESIM, HSPICE, and VERILOG for complex circuit simulation and analysis.
  • Demonstrated ability to solve ambitious technical problems with significant design or innovation impact.
  • Deep knowledge of DRAM subsystem architecture, operation, or building.

Nice to have

  • MS or PhD in Electrical Engineering or a related field, or equivalent experience.
  • Strong industry awareness of memory technology trends and emerging design methodologies.
  • Exceptional communication and leadership skills with the ability to influence across organizations.

Skills: DRAM circuits, memory core subsystems, FINESIM, HSPICE, VERILOG

More semiconductor jobs: Micron Technology jobs · Richardson jobs

Market context

This role has been open 112 days — well above the 72-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
302
Median days open
72 d
Category median salary (all employers)
$205k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How Micron Technology compares in Memory Design hiring
Metric Micron Technology All employers we track in this specialty (302 roles · 29 employers)
Open roles in this specialty 154 302
Median days open 81 d 72 d (+9 d vs this employer)
Median salary (USD postings) — $205k

Skills observed across this category: DRAM circuits, memory core subsystems, FINESIM, HSPICE, VERILOG

Who's hiring in this category

  • Micron Technology (this employer) · 154 open roles · median 82 d
  • Synopsys · 30 open roles · median 77 d
  • Qualcomm · 18 open roles · median 106 d
  • Broadcom · 16 open roles · median 78 d
  • SanDisk · 15 open roles · median 7 d
  • NVIDIA · 8 open roles · median 59 d

How we counted: 302 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 6 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

Apply now
Richardson, TX, United States
On-site
Full-time
4 months ago

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