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Samsung Semiconductor

Principal Engineer, DRAM Circuit Design

Samsung Semiconductor San Jose, California, United States Full-time 1 day ago
Digital Design & SoC Architecture

$219,000 - $351,000 USD yearly

Originally posted 4 November 2026 by the employer.

About the role

The Principal Engineer of DRAM Circuit Design is responsible for growing Samsung's memory business through DRAM architecture and circuit development.

What you'll do

  • Develop DRAM architecture and optimize floor plan implementations.
  • Develop Row, Column Bank circuit design, data path, and related test modes.
  • Identify device requirements for advanced memory product design and collaborate with process integration and device modeling groups.
  • Characterize power delivery network performance and optimize related circuits and architecture.
  • Analyze electrical data from silicon to validate new core design architecture performance.
  • Create documentation for design specifications, performance analysis, and test plans.

What you'll need

  • BS with 18+ years of DRAM design engineering experience, MS with 15+ years, or PhD with 12+ years in the semiconductor field.
  • Demonstrated knowledge, achievements, and skillsets in memory design.
  • Proficiency with design software and statistical analysis tools.
  • Ability to work onsite at the San Jose office 5 days a week with up to 10% travel.

Skills: DRAM, memory design, circuit development, power delivery network

More semiconductor jobs: Samsung Semiconductor jobs · San Jose jobs

Market context

This role has been open 0 days — well below the 70-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
305
Median days open
70 d
Category median salary (all employers)
$200k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How Samsung Semiconductor compares in Memory Design hiring
Metric Samsung Semiconductor All employers we track in this specialty (305 roles · 29 employers)
Open roles in this specialty 4 305
Median days open 3 d 70 d (−67 d vs this employer)
Median salary (USD postings) — $200k

Skills observed across this category: DRAM, memory design, circuit development, power delivery network

Who's hiring in this category

  • Micron Technology · 157 open roles · median 81 d
  • Synopsys · 30 open roles · median 75 d
  • Qualcomm · 19 open roles · median 96 d
  • Broadcom · 16 open roles · median 76 d
  • SanDisk · 15 open roles · median 5 d
  • NVIDIA · 8 open roles · median 57 d

How we counted: 305 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 4 Nov 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

Samsung Semiconductor

Samsung Semiconductor

Apply now
San Jose, California, United States
On-site
Full-time
$219,000 - $351,000 USD yearly
1 day ago

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