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Micron Technology

Interface Design Architect, HBM - DMTS - Richardson, TX, United States

Micron Technology Richardson, TX, United States Full-time 5 days ago
Digital Design & SoC Architecture

Originally posted 30 September 2026 by the employer.

Define HBM PHY and die-to-die interfaces for advanced heterogeneous systems.

About the role

This role involves owning and delivering critical HBM IO blocks and subsystems from architectural definition through post-silicon debug.

What you'll do

  • Own and deliver critical HBM IO blocks and subsystems from architectural definition through circuit and RTL implementation, verification, tape-out, silicon bring-up, and post-silicon debug.
  • Define HBM PHY, controller-to-PHY, die-to-die, clocking, training, calibration, power-management, error-handling, and test requirements for advanced heterogeneous systems.
  • Drive robust, high-performance builds by balancing bandwidth, latency, power, area, reliability, electrical signal quality, power stability, yield, and manufacturability trade-offs.
  • Lead architecture and design of analog, mixed-signal, and digital interface functions used in high-speed memory subsystems.
  • Partner with package, interposer, physical design, signal integrity, power integrity, and thermal teams to optimize interface implementation across 2.5D and 3D systems.
  • Lead root-cause analysis and resolution of complex pre-silicon and post-silicon issues across circuit design, RTL, architecture, process, package, interposer, and system interactions.

What you'll need

  • 18+ years of experience in HBM, DDR, LPDDR, advanced memory, high-speed PHY, mixed-signal design, system-on-chip, or application-specific integrated circuit design roles.
  • Proven experience delivering complex interface IP or subsystems from architecture through silicon bring-up and post-silicon debug.
  • Strong expertise in high-speed memory-interface architecture and design, preferably including HBM product families.
  • Extensive experience with analog and mixed-signal circuit design, digital microarchitecture, RTL design, clocking, training, calibration, power management, and error handling.
  • Experience with front-end implementation and verification, including synthesis, static timing analysis, logic equivalence, and RTL debug.
  • Demonstrated technical project leadership across multidisciplinary and multi-site engineering teams.
  • Bachelor’s degree or higher in Electrical Engineering, Computer Engineering, or a related field.

Nice to have

  • Direct experience architecting or developing HBM PHYs, DDR or LPDDR PHYs, or complete PHY and controller subsystems.
  • Experience with CPO system architecture, optical-engine electrical interfaces, silicon-photonics integration, or high-speed SerDes.
  • Experience with UCIe or other die-to-die interfaces and chiplet-based architectures.
  • Experience with transistor-level design and analog simulation tools such as FastSPICE, HSPICE, or similar.
  • Experience with digital design using Verilog, SystemVerilog, or similar RTL methodologies.
  • Exposure to 2.5D or 3D packaging technologies, including through-silicon vias, microbumps, hybrid bonding, and interposers.
  • Experience with signal integrity, power integrity, package electrical design, and high-speed channel analysis.
  • Experience integrating external IP into complex SoCs or heterogeneous multi-die systems.
  • Experience contributing to JEDEC, DFI, UCIe Consortium, OIF, or other relevant technical standards.

Skills: HBM IO blocks, HBM PHY, die-to-die, mixed-signal design, JEDEC specifications, chiplet

Market context

This role has been open 4 days — well below the 69-day median for Memory Design roles.

Memory Design · Memory Design

Open roles in category
287
Median days open
69 d
Median salary
$205k
See the full market breakdown ▾Category comparison, skills in demand, and who else is hiring
How Micron Technology compares in Memory Design hiring
Metric Micron Technology All employers we track in this specialty (287 roles · 29 employers)
Open roles in this specialty 153 287
Median days open 86 d 69 d (+17 d vs this employer)
Median salary (USD postings) — $205k

Skills observed across this category: HBM IO blocks, HBM PHY, die-to-die, mixed-signal design, JEDEC specifications, chiplet

Who's hiring in this category

  • Micron Technology (this employer) · 151 open roles · median 86 d
  • Synopsys · 27 open roles · median 49 d
  • SanDisk · 17 open roles · median 32 d
  • Broadcom · 16 open roles · median 50 d
  • Qualcomm · 12 open roles · median 149 d
  • NVIDIA · 7 open roles · median 59 d

How we counted: 287 open Memory Design (Memory Design) roles from 29 employers tracked in the SemiconductorJobs index, counted 5 Oct 2026. Specialty figures count only roles carrying this exact specialty label, so an employer's related work in neighbouring specialties is not included there. Figures refresh nightly.

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Richardson, TX, United States
On-site
Full-time
5 days ago

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